The ultimate goal in failure analysis is to arrive at an accurate determination of the cause of the failure. To achieve this goal our electron microscopes and ion beam systems have been designed in close collaboration with Hitachi´s own semiconductor production to meet current and future failure analysis demands.
For example, using our unique micro-sampling technology and our dedicated STEM we can find even nanoscale failures in the shortest turnaround times.
Hitachi´s ultra-high resolution scanning electron microscopes have the same wellknown reliability of our inline systems and a defacto semiconductor standard in the physical failure analysis labs of the leading manufacturers.
FE-SEM SU8040
Cold-field emission source, large sample sizes
FE-SEM SU-70
Schottky emission source, large sample sizes
UHR FE-SEM&STEM SU9000
Inlens optics, highest resolution, small sample sizes
Dedicated STEM HD-2700
Cold or Schottky emission source, 80-200keV beam energy
Single Beam FIB FB-2200
Sample preparation optimized for above systems
FIB-SEM NB5000
UHR Schottky FE-SEM & 40kV, 60nA FIB combined in one instrument
Nano-Prober N-6000
Dedicated system for electrical probing of single devices
Nano-Ebac NE4000
4-probe SEM for electrical device characterization
